Overview of IACS (Indian Association for Cultivation of Science)
IACS is a premier Scientific Research Institute located in Kolkata. Founded in the year 1876 by Dr. Mahendralal Sircar, an acclaimed medical practitioner of his time, IACS is the oldest scientific institution in Asia funded by the Department of Science & Technology, Government of India and the Government of West Bengal.
Sir C.V. Raman made his historic discovery of ‘Raman Effect’ at IACS. It continues to adorn the mantle of academic and intellectual excellence in India and abroad. The IACS is the oldest research institute in Asia & celebrated its 145th foundation day on 29th July 2020. The scientific heritage lies in the fact that from having modest instrumental facilities to becoming one of the leading institutes of Asia through the testing times of sustainability.
IACS has been credited to have the only Nobel prize-winning work in Science from India (also the first in Asia) and produced the highest number of distinguished awardees.
The one-day online workshop on “Advances in Electron Beam Lithography: Fundamentals to Applications“ is intended to furnish the knowledge and know-how about Electron Beam Lithography (EBL) for researchers.
It is a great opportunity for young researchers and faculty to get trained and understand the electron beam lithography process. The internationally reputed faculty in EBL will deliver talks where all the fundamental aspects of the EBL including e-Beam resist, writing speed and patterning features will be discussed.
The webinar will also provide an overview of RF devices, photonic devices, large-scale device fabrication and other device applications. The webinar will be hosted by IACS, Kolkata in collaboration with ZEISS Microscopy India.
- Insights from internationally reputed faculty on the concept of Electron Beam Lithography
- The training and understanding of Electron Beam Lithography process
- The fundamental aspects and device applications of the Electron Beam Lithography will be discussed
CHAIR - Prof. Sudip Malik
10.25 AM - Welcome Address
10.30 AM - Inauguration
10.40 AM - Plenary Talk by G.U Kulkarni, Director JNCASR, India
G U Kulkarni - President, JNCASR India
Plenary Speaker Profile
G. U. Kulkarni is the President, JNCASR and Adjunct Professor at CeNS, Bangalore. He received his PhD at Indian Institute of Science in 1992 and has held visiting/adjunct positions at Cardiff, Tokyo, TASC-INFM, Trieste; Scuola Normale Superiore, Pisa; Purdue etc. His present research interests are focused on new strategies in synthesis of nanomaterials, nanopatterning and nanodevice fabrication including of molecular systems.
Prof. Kulkarni has received numerous awards such as Sudborough medal and the Best Thesis award from Chemical Sciences Division at IISc, Material Research Society of India Lecture medal 1999, Sir C. V. Raman Young Scientist award 1999, B.M. Birla Science prize in Chemistry 2002, Chemical Research Society of India Lecture medal 2003, Prof. C.N.R. Rao Oration award 2006, MRSI-ICSC Superconductivity and Materials Science Annual Prize 2011, Bangalore Nano National Award 2012.
Prof. Kulkarni has published 1 book in Springer on Nanocrystals, 9 other book chapters, several world and US patent applications, and 250 research publications in highly reputed peer-reviewed journals which have fetched 11000 citations and led to h-index of 51.
CHAIR - Dr. Praveen Kumar
11.15 AM to 12.00 PM - Heterostructures for Advanced Logic, Memory and Photonics
Prof. Deep Jariwala, University of Pennsylvania, USA
Deep Jariwala is an Assistant Professor in Department of Electrical and Systems Engineering at the University of Pennsylvania (UPenn)
The isolation of a growing number of two-dimensional (2D) materials has inspired worldwide efforts to integrate distinct 2D materials into van der Waals (vdW) heterostructures. While a tremendous amount of research activity has occurred in assembling disparate 2D materials into “all-2D” van der Waals heterostructures and making outstanding progress on fundamental studies, practical applications of 2D materials will require a broader integration strategy. I will present our ongoing and recent work on integration of 2D materials with 3D electronic materials to realize logic switches and memory devices with novel functionality that can potentially augment the performance and functionality of Silicon technology. First, I will present our recent work on gate-tunable diode and tunnel junction devices based on integration of 2D chalcogenides with Si and GaN. Following this I will present our recent work on non-volatile memories based on Ferroelectric Field Effect Transistors (FE-FETs) made using a heterostructure of MoS2/AlScN and I also will present our work on Ferroelectric Diode devices also based on thin AlScN.
12.00 PM to 12.45 PM - Resists for e-Beam and He-ion Beam Lithography
Prof. Subrata Ghosh, IIT Mandi, India
Prof. Subrata Ghosh completed his PhD in 2006. He is currently serving IIT Mandi as a faculty in the School of Basic Sciences
Despite the challenges with e-beam lithography (EBL) mainly because of slow writing speed, this technology has remained as one of the most prominent writing tool especially for academic research. Moreover, this has been a preferred technique for some important applications that include optoelectronic devices, metamaterials, photomask fabrication, quantum structures, and so on. Hence, high performance resists for EBL is paramount for desired applications. Although several resist platforms have been developed and reported in the literature, obtaining dense features for sub-15 nm technology has always been a challenge. The present talk will provide an overview of our recent resist compositions for patterning dense features for sub-15 nm technology nodes. Moreover, we successfully patterned 12 nm and above dense features as well as sub-10 nm isolated features using electron beam lithography (EBL) and helium ion beam lithography (HIBL). Also, we could pattern such features with resist film thickness approximately 15 nm. The patterned features were characterized through FE-SEM and AFM studies.
12.45 PM to 01.30 pm - Novel designs and structures by electron beam lithography for RF applications
Dr. Abhay A. Sagade, SRMIST Chennai, India
Dr. Sagade has 3.5y industrial experience and over 12y research experience. He is a life-member of Indian Physics Association (IPA) and MRSI, India.
The strength of EBL is in creating novel designs with minimal residues on the wafer. Fabricating devices for RF applications has been progressed due to EBL. This presentation will discuss importance of EBL for: i) fabrication of RF transistors with critical shapes and improvements in its performance, ii) high-frequency photodetectors, and iii) nano-antenna.
01.30 PM to 02.30 PM - LUNCH
CHAIR - Dr. Subhadeep Dutta
02.30 PM to 03.15 PM - Electron Beam Lithography: Some Concepts and Utilities
Dr. Dibyendu Hazra, VTT Helsinki, Finland
Dr. Dibyendu Hazra is currently working as Research Scientist at VTT Technical Research Centre of Finland Ltd, Helsinki, Finland
Electron Beam Lithography (EBL) is one of the important tools for nano-scale device fabrication. In recent years, the realm of EBL is being extended from merely being a tool for fundamental research to large-scale device fabrication. In this talk, I shall introduce the basic idea behind EBL, what to and what not to do with it, its utilities for academic and industrial research, development, and production. Finally, I shall touch upon how the hands-on EBL knowledge can be exploited for future career development
03.15 PM to 04.00 PM - Introduction to “Electron Beam” Lithography
Mr. Otto Carel, Raith B.V, India
Mr. Carel has over 30 years of experience in optical microscopy and electron beam lithography systems. He is the Director of Sales India, Middle East, Belgium and the Netherlands
The talk/presentation would be on the general basics of Lithography and Nanoengineering technology with the strong focus on (Gaussian) Electron Beam Lithography. In the first part of the talk an introduction to different sorts of lithography is given, moving on to the second part which will give an overview of different Electron Beam approaches, where the third part will discuss basics of the process chain / process variables to be taken into account with “EBL”
04.00 PM to 04.45 PM - Applications of Electron-Beam-Lithography
Dr. Guido Piaszenski, Raith GmbH, Germany
Dr. Piaszenski graduated in 1997 from the University of Osnabrück in the field of high energy ion scattering
Electron Beam Lithography (EBL) has become one of the key techniques in nanotechnology applications. However, to achieve bench mark results, a deep understanding of the capabilities of EBL technique is mandatory.
In the first part of the presentation, we will give some recent examples of photonic devices fabricated with Gaussian beam EBL. The fabrication of a single photon source employing cathodoluminescence (CL) spectroscopy and CL mapping is presented in detail.
Part 2 will cover details of the fabrication processes of photonic applications such as waveguides, gratings and photonic crystals. We will illustrate some of the critical parameters in setting up an optimum EBL process
04.45 PM to 05.30 PM - Sub-10 nm Nanofabrication with Light Ions
Dr. Vignesh Viswanathan, Carl Zeiss, Singapore
Dr. Vignesh is a Business Development Manager responsible for strategic marketing and application development of microscopy solutions for the Electronics sector across Asia Pacific
Electron Beam Lithography and Ga LMIS based FIB systems have been workhorse techniques for nanofabrication and characterization. Utilization of these techniques have become challenging for applications where the features scale down to sub-20 nm dimensions. Among the several new techniques for advanced nanofabrication and characterization, Orion NanoFab, a Gas Field Ion Source (GFIS) based platform using noble gases has been employed for sub-10 nm nanofabrication and high-resolution imaging in a variety of applications.
The GFIS employed exhibits a low energy spread, small virtual source size and a high brightness to produce fine probes of Helium and Neon ion beams. This, in conjunction with the shallow escape depth (<1 nm) of the secondary electrons generated by the incident ions, contribute to the NanoFab’s primary advantage in the imaging of solid samples: its high spatial resolution. In addition to the high resolution, the integrated electron flood gun enables imaging of insulating samples without any conductive coating without charging artifacts.
Furthermore, the appreciable sputter yield from helium and neon ions and the small probe size enable material modification and nanopatterning capabilities at the sub-10 nm dimension. Direct milling of sub-10 nm features on graphene and other 2D materials, plasmonic devices on metals, nanopores and lithography of resists, direct metal and insulator deposition using gas injection systems have already been demonstrated with this tool. This has opened the application of this technology to a broad spectrum of multidisciplinary applications from basic materials science and biological science to semiconductor applications
05.30 PM - Conclusion by Dr. K D M Rao, IACS Kolkata
KEY INFORMATION ABOUT THE WORKSHOP
- All times mentioned are in IST (Indian Standard Time)
- Plenary talk duration is 25 minutes, 8 minutes Q&A section and 2 minutes changeover time
- Each talk duration is 35 minutes, 8 minutes Q&A section and 2 minutes changeover timE
Dr. K D M Rao - School of Applied & Interdisciplinary Science, IACS Kolkata
Contact Mail - saisk dmrao @iacs .res .in